Author/Authors
serincan, uğur anadolu university - faculty of science - nanoboyut research laboratory, department of physics, Eskişehir, Turkey , erkuş, mehmet anadolu university - faculty of science - nanoboyut research laboratory, department of physics, Eskişehir, Turkey , şenel, onur anadolu university - faculty of science - nanoboyut research laboratory, department of physics, Eskişehir, Turkey
Title Of Article
UNPASSIVATED HIGH OPERATING TEMPERATURE GaInAsSb INFRARED PHOTODETECTOR GROWN ON GaAs SUBSTRATE
شماره ركورد
34434
Abstract
Ga0.87In0.13As0.4Sb0.96 photodiode structure was grown on semi-insulating 4” GaAs substrate by molecular beam epitaxy. The composition, crystal quality and dislocation density of epilayers were determined by high resolution X-ray diffraction rocking curve measurements. The threading dislocation density of the photodetector structure was calculated from the rotational broadening as ~2.5x10^8 cm^-2. The cutoff wavelength and the peak responsivity of the photodetector were determined as around 2.15 μm and 0.08 A/W at 300 K, respectively. By applying reverse bias (-100 mV) the responsivity value of the photodetector increases more than an order (~0.96 A/W) which is the best value reported up to now. Those results indicate that although there is a large lattice mismatch (~8.4%) between GaAs substrate and the photodetector structure, an acceptable photodetector performance was achieved which is important for reducing photodetector costs.
From Page
624
NaturalLanguageKeyword
MBE , GaInAsSb , HRXRD , Photodetector
JournalTitle
Anadolu University Journal of Science and Technology. A : Applied Sciences and Engineering
To Page
631
JournalTitle
Anadolu University Journal of Science and Technology. A : Applied Sciences and Engineering
Link To Document