Author/Authors :
HİÇDURMAZ, Bahadır Dumlupınar University - Faculty of Engineering - Department of Electrical and Electronics Engineering, Turkey , ÖZZAİM, Cengiz Anadolu University, Iki Eylül Kampüsü - Faculty of Engineering - Department of Electrical and Electronics Engineering, Turkey
Title Of Article :
A DC~1.6 GHz DISTRIBUTED AMPLIFIER WITH GaAs MESFETs
شماره ركورد :
34818
Abstract :
Abstract: In this study, a DC ~ 1.6 GHz bandwidth distributed amplifier (DA) is fabricated in printed circuit board (PCB). The scattering (S-) parameters of the distributed amplifier are measured and compared with simulated results. In characterization of the amplifier, small-signal microwave S- parameters given at some discrete frequencies of transistors are utilized. According to obtained results, it is observed that measured and simulated results are in relatively good agreement.
From Page :
159
NaturalLanguageKeyword :
Distributed amplifier , broadband , S , parameters , PCB fabrication
JournalTitle :
Uludağ University Journal of The Faculty of Engineering
To Page :
169
Link To Document :
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