Author/Authors :
Babanlı, Arif Süleyman Demirel Üniversitesi - Fen-Edebiyat Fakültesi - Fizik Bölümü, Turkey , Altuğ, Deniz Türköz Süleyman Demirel Üniversitesi - Hidrojen Teknolojileri Araştırma Uygulama Merkezi, Turkey
Title Of Article :
Effective g-factor of Electrons in the Kane Type Semiconductor which has Delta Type Potential Barrier
Abstract :
In this study, the effective g-factor of electrons has been calculated on Kane type semiconductors which have a delta-type potential barrier. Applied uniform magnetic field directed along the axis-z. The energy spectrum of the electrons has been investigated into the Kane model. The electron g-factor calculated as a function of the strength of potential barrier and the centre of magnetic oscillations. It has been seen that the effective g-value of electron increases with increasing Ω, also oscillations have been observed the dependence on the equilibrium position.
NaturalLanguageKeyword :
Kane type semiconductors , g , factor
JournalTitle :
Süleyman Demirel University Faculty of Arts and Science Journal of Science
