Author/Authors
Babanlı, Arif Süleyman Demirel Üniversitesi - Fen-Edebiyat Fakültesi - Fizik Bölümü, Turkey , Altuğ, Deniz Türköz Süleyman Demirel Üniversitesi - Hidrojen Teknolojileri Araştırma Uygulama Merkezi, Turkey
Title Of Article
Effective g-factor of Electrons in the Kane Type Semiconductor which has Delta Type Potential Barrier
شماره ركورد
36012
Abstract
In this study, the effective g-factor of electrons has been calculated on Kane type semiconductors which have a delta-type potential barrier. Applied uniform magnetic field directed along the axis-z. The energy spectrum of the electrons has been investigated into the Kane model. The electron g-factor calculated as a function of the strength of potential barrier and the centre of magnetic oscillations. It has been seen that the effective g-value of electron increases with increasing Ω, also oscillations have been observed the dependence on the equilibrium position.
From Page
132
NaturalLanguageKeyword
Kane type semiconductors , g , factor
JournalTitle
Süleyman Demirel University Faculty of Arts and Science Journal of Science
To Page
136
JournalTitle
Süleyman Demirel University Faculty of Arts and Science Journal of Science
Link To Document