Author/Authors
özaslan, doğan çukurova üniversitesi - fen-edebiyat fakültesi - fizik bölümü, Adana, Türkiye , güneş, mustafa adana bilim ve teknoloji üniversitesi - mühendislik ve doğa bilimleri fakültesi, Adana, Türkiye , gümüş, cebrail çukurova üniversitesi - fizik bölümü, fen-edebiyat fakültesi, Adana, Türkiye
Title Of Article
Physical properties of Cu_2O thin films prepared by silar method
شماره ركورد
40994
Abstract
Polycrystalline Cu_2O thin films were obtained on glass substrates using by silar method at 70 °C. XRD analysis showed the films are a cubic structure and lattice parameters were calculated. The surface morphology of the films were imaged by FE-SEM (Field Emission Scanning Electron Microscope). In order to determine the optical properties of the Cu_2O thin films UV/vis spectrophotometer was used. Optical transmittance (T %) values of the Cu_2O films were determined in the wavelength range 300-1100 nm at room temperature. Semiconductor Cu_2O of the thin films optical transmittance values were found to be 50-70% in the visible region. Energy band gap values (Eg) of the films were found to be 2.53-2.62 eV.
From Page
854
NaturalLanguageKeyword
Silar method , Thin film , Cu_2O , Physical properties
JournalTitle
Pamukkale University Journal Of Engineering Sciences
To Page
857
JournalTitle
Pamukkale University Journal Of Engineering Sciences
Link To Document