Author/Authors
Tuzemen, Ebru Senadim Cumhuriyet University - Nanotechnology Center - Department of Physics, Turkey , Elagoz, Sezai Cumhuriyet University - Nanotechnology Center - Department of Physics, Turkey , Sahin, Hulya Cumhuriyet University - Nanotechnology Center - Department of Physics, Turkey , Kara, Kamuran Cukurova University - Department of Physics, Turkey , Esen, Ramazan Cukurova University - Department of Physics, Turkey , Bulut, Ahmet Cumhuriyet University - Nanotechnology Center - Department of Physics, Turkey
Title Of Article
Effects of Annealing on Reflectance of ZnO Grown by PFCVAD
شماره ركورد
43813
Abstract
ZnO thin film was prepared onto microscope glass slide substrate by using pulsed filtered cathodic vacuum arc deposition system. ZnO thin film was thermally annealed for one hour at three different temperatures in air. The film structure was investigated as a function of annealing temperature by x-ray diffraction (XRD). As-deposited film shows amorphous property. The grain size increases with the increase of annealing temperature. The dependence of optical properties on annealing was investigated using UV–Vis-NIR spectrophotometer. When the annealing temperature increased, the diffuse reflection was reduced. When the angle of incidence specular reflectance increased from angle of 30 degrees to angle of 60 degrees, specular reflectance was increased. When annealing temperature increased, specular reflectance was also increased for angle of 30 and 60 degrees. In addition the optical band gap of ZnO film was observed and found to be varying from 3.22 eV to 3.25 eV with the annealing temperature.
From Page
41
NaturalLanguageKeyword
Zinc oxide (ZnO) , Annealing temperature , Diffuse and specular reflectance , Optical band gap
JournalTitle
International journal of advances in engineering and pure sciences
To Page
50
JournalTitle
International journal of advances in engineering and pure sciences
Link To Document