Title :
Applications of dual-gate GaAs m.e.s.f.e.t.s for fast pulse shape regeneration systems
Author :
Filensky, W. ; Ponse, F. ; Beneking, H.
Author_Institution :
Aachen Technical University, Institute of Semiconductor Electronics, Aachen, West Germany
Abstract :
The suitability of dual-gate GaAs m.e.s.f.e.t.s for pulse shape reconstruction in the Gbit/s range is presented. The properties of these f.e.t.s and the circuitry for reduction of pulse width and pulse slope are both described. The variation of the input/output pulse-width ratio and the time behaviour for fast pulses are shown.
Keywords :
Schottky gate field effect transistors; gallium arsenide; optical communication equipment; pulse shaping circuits; solid-state microwave devices; Gbit/s range; dual gate GaAs MESFETs; fast pulse shape regeneration systems; microwave solid state devices; optical fibre communication systems; pulse shape reconstruction; pulse shaping circuits;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19800153
