DocumentCode
1000028
Title
Applications of dual-gate GaAs m.e.s.f.e.t.s for fast pulse shape regeneration systems
Author
Filensky, W. ; Ponse, F. ; Beneking, H.
Author_Institution
Aachen Technical University, Institute of Semiconductor Electronics, Aachen, West Germany
Volume
16
Issue
6
fYear
1980
Firstpage
214
Lastpage
216
Abstract
The suitability of dual-gate GaAs m.e.s.f.e.t.s for pulse shape reconstruction in the Gbit/s range is presented. The properties of these f.e.t.s and the circuitry for reduction of pulse width and pulse slope are both described. The variation of the input/output pulse-width ratio and the time behaviour for fast pulses are shown.
Keywords
Schottky gate field effect transistors; gallium arsenide; optical communication equipment; pulse shaping circuits; solid-state microwave devices; Gbit/s range; dual gate GaAs MESFETs; fast pulse shape regeneration systems; microwave solid state devices; optical fibre communication systems; pulse shape reconstruction; pulse shaping circuits;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19800153
Filename
4249598
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