Title :
Absolute movement of energy levels in junctions formed by dissimilar materials
Author :
Dronavalli, Smitha ; Jindal, Renuka P.
Author_Institution :
W. H. Hall Dept. of Electr. & Comput. Eng., Univ. of Lousiana, Lafayette, LA, USA
Abstract :
We propose a method to determine the absolute location of energy levels when electrical contact is made between two dissimilar materials. The conventional method of determining the energy levels is correct only as a limiting case when the number of electrons in one sample greatly exceed that in the other.
Keywords :
Fermi level; interface states; ohmic contacts; semiconductor heterojunctions; absolute location; absolute movement; dissimilar materials; electrical contact; energy levels; energy-level placement; global vacuum level; heterojunction; homojunction; local vacuum level; parallel-plate capacitor; quasi-Fermi level; Batteries; Capacitors; Charge carrier processes; Conducting materials; Contacts; Electrons; Energy states; H infinity control; Heterojunctions; Steady-state; Energy-level placement; global vacuum level; heterojunction; homojunction; local vacuum level;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2005.852521
