DocumentCode :
1000126
Title :
Monolayer metallic nanotube interconnects: promising candidates for short local interconnects
Author :
Naeemi, Azad ; Meindl, J.D.
Author_Institution :
Georgia Inst. of Technol., Atlanta, GA, USA
Volume :
26
Issue :
8
fYear :
2005
Firstpage :
544
Lastpage :
546
Abstract :
Mono- or bi-layer metallic single-wall carbon nanotube interconnects have lateral capacitances more than four times smaller than those of copper interconnects. The resistance and time-of-flight of these monolayer nanotubes would be larger than that of copper interconnects. For short lengths, however, driver resistance is quite dominant, and latency is determined by interconnect capacitance. Monolayer nanotube interconnects are therefore promising candidates for local interconnects. The average capacitance per unit length of these nanotube interconnects can be 50% smaller than that of copper interconnects and that leads to significant saving in power dissipation.
Keywords :
carbon nanotubes; integrated circuit interconnections; nanotube devices; bi-layer metallic single-wall carbon nanotube interconnects; integrated circuit interconnections; molecular electronics; monolayer metallic single-wall carbon nanotube interconnects; nanotube devices; short local interconnects; Carbon nanotubes; Copper; Delay; Electrons; Inductance; Kinetic theory; Light scattering; Particle scattering; Power dissipation; Quantum capacitance; Interconnections; modeling; molecular electronics; quantum wires;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2005.852744
Filename :
1468217
Link To Document :
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