Title :
InP epitaxy with a new metalorganic compound
Author :
Renz, H. ; Weidlein, J. ; Benz, K.W. ; Pilkuhn, M.H.
Author_Institution :
Universitÿt Stuttgart, Institut fÿr Anorganische Chemie, Stuttgart, West Germany
Abstract :
A new metal-organic compound, a trimethyl-indium trimethyl-phosphine adduct has been used for the growth of InP epitaxial layers. The formation of unwanted polymer products during epitaxial growth could be avoided in this way. Epitaxial layers of good quality (ND ¿ NA¿1016¿1017 cm¿3 were grown at a rate of 0.8 ¿m/h.
Keywords :
III-V semiconductors; indium compounds; organometallic compounds; semiconductor growth; vapour phase epitaxial growth; (CH3)3In-P(CH3)3; CVD; InP epitaxy; VPE; advantages; growth rate 0.8 micron/h; metalorganic compound; trimethyl indium trimethyl phosphine adduct;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19800163
