Title :
Hot carrier-induced degradation in bulk FinFETs
Author :
Kim, Sang-Yun ; Lee, Jong Ho
Author_Institution :
Sch. of Electron. & Electr. Eng., Kyungpook Nat. Univ., Daegu, South Korea
Abstract :
Hot-carrier effects in n-channel bulk FinFETs were investigated for the first time. For VDS larger than about 1.4 V, stress bias condition of VGS=VDS showed shorter lifetime than that of VGS=VDS/2 stress condition. The hot-carrier-induced degradation was checked by changing the fin body width, and increased with decreasing the width. Bulk FinFETs with (100) side surface orientation showed less gmmax degradation than that of the device with [110] side surface. The supply voltage which meets 10 years lifetime at the stress bias condition of VGS=VDS was 1.2 V.
Keywords :
field effect transistors; hot carriers; semiconductor device reliability; 1.2 V; hot carrier effects; hot-carrier-induced degradation; n-channel bulk FinFET; stress bias condition; CMOS technology; Degradation; FinFETs; Hot carrier effects; Hot carriers; Scalability; Silicon compounds; Silicon on insulator technology; Stress; Transconductance; Bulk FinFET; degradation; hot-carrier effects;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2005.852534
