High-gain, high-speed InP/InGaAs double-heterojunction bipolar transistors with a step-graded base-collector heterojunction

Author

Willén, Bo ; Westergren, Urban ; Asonen, Harry

Author_Institution

Dept. of Electron., R. Inst. of Technol., Stockholm, Sweden

Volume

16

Issue

11

fYear

1995

Firstpage

479

Lastpage

481

Abstract

We show that by using InP for the emitter and collector layers, and a thin high-doped base layer, it is possible to achieve both a high DC current gain and a high maximum frequency of oscillation. We have fabricated InP/InGaAs double heterojunction bipolar transistors (DHBT´s) with cutoff frequencies f/sub T/ and f/sub max/ of 92 and 95 GHz, respectively, with a DC current gain of over 100. The maximum cutoff frequencies were 107 and 104 GHz.<>

Keywords

III-V semiconductors; gallium arsenide; heavily doped semiconductors; heterojunction bipolar transistors; indium compounds; millimetre wave bipolar transistors; molecular beam epitaxial growth; 92 to 107 GHz; DHBT; GSMBE; HBT fabrication; InP collector layer; InP emitter layer; InP-InGaAs; MBE growth; double-heterojunction bipolar transistors; high DC current gain; high maximum oscillation frequency; step-graded base-collector heterojunction; thin high-doped base layer; Bipolar transistors; DH-HEMTs; Electrons; Frequency; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Molecular beam epitaxial growth; Photonic band gap; Temperature measurement;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.468273

Filename

468273