Short-channel GaAs FET fabricated like a MESFET but operating like a JFET

Normally-on GaAs field-effect transistors (FETs) having 1 ¿m gate lengths and 4 ¿m channel lengths were fabricated in structures grown by molecular beam epitaxy (MBE). The unique part of this device is the very thin p+/n+ structure used to replace the conventional Schottky barriers. The device fabrication procedure is identical to that of a Schottky barrier FET (MESFET), but the devices exhibit characteristics similar to that of a junction field-effect transistor (JFET). This new device, the `camel diode gate FET¿, is expected to have applications in both logic and power devices.