DocumentCode :
1000367
Title :
Short-channel GaAs FET fabricated like a MESFET but operating like a JFET
Author :
Morko¿¿, H.
Author_Institution :
University of Illinois, Department of Electrical Engineering and Coordinated Science Laboratory, Urbana, USA
Volume :
18
Issue :
6
fYear :
1982
Firstpage :
258
Lastpage :
259
Abstract :
Normally-on GaAs field-effect transistors (FETs) having 1 ¿m gate lengths and 4 ¿m channel lengths were fabricated in structures grown by molecular beam epitaxy (MBE). The unique part of this device is the very thin p+/n+ structure used to replace the conventional Schottky barriers. The device fabrication procedure is identical to that of a Schottky barrier FET (MESFET), but the devices exhibit characteristics similar to that of a junction field-effect transistor (JFET). This new device, the `camel diode gate FET¿, is expected to have applications in both logic and power devices.
Keywords :
III-V semiconductors; field effect transistors; gallium arsenide; JFET; MESFET; Schottky barrier FET; camel diode gate FET; logic applications; molecular beam epitaxy; p+/n+ structure; power device applications; short channel GaAs FET;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19820177
Filename :
4249634
Link To Document :
بازگشت