Ultrashort Pulse Amplification at 1080 nm With a Long-Wavelength InGaAs–GaAs Flared Amplifier

Author

Budz, A.J. ; Haugen, H.K.

Author_Institution

McMaster Univ., Hamilton

Volume

25

Issue

12

fYear

2007

Firstpage

3766

Lastpage

3769

Abstract

Pulses of 5 ps in duration have been amplified using a long-wavelength InGaAs-GaAs semiconductor optical amplifier containing a flared waveguide. The amplifier is seeded using short pulses emitted by a passively mode-locked semiconductor laser. Average output powers of 50 mW have been obtained at a center wavelength of 1080 nm for a drive current of 290 mA. Pulse compression yields durations as short as 520 fs and peak powers as high as 40 W. Perspectives for combining the semiconductor master oscillator power amplifier with Yb fiber amplifiers in a hybrid configuration are also briefly discussed.

Keywords

III-V semiconductors; gallium arsenide; indium compounds; integrated optics; optical pulse compression; optical waveguides; semiconductor optical amplifiers; InGaAs-GaAs; Yb fiber amplifiers; current 290 mA; flared waveguide; long-wavelength InGaAs-GaAs flared amplifier; pulse compression; semiconductor optical amplifier; ultrashort pulse amplification; wavelength 1080 nm; High power amplifiers; Laser mode locking; Optical amplifiers; Optical fiber amplifiers; Optical pulses; Optical waveguides; Pulse amplifiers; Semiconductor lasers; Semiconductor optical amplifiers; Semiconductor waveguides; Optical pulse amplifiers; semiconductor lasers; semiconductor optical amplifiers (SOAs);

fLanguage

English

Journal_Title

Lightwave Technology, Journal of

Publisher

ieee

ISSN

0733-8724

Type

jour

DOI

10.1109/JLT.2007.909356

Filename

4396995