Title :
Ultrashort Pulse Amplification at 1080 nm With a Long-Wavelength InGaAs–GaAs Flared Amplifier
Author :
Budz, A.J. ; Haugen, H.K.
Author_Institution :
McMaster Univ., Hamilton
Abstract :
Pulses of 5 ps in duration have been amplified using a long-wavelength InGaAs-GaAs semiconductor optical amplifier containing a flared waveguide. The amplifier is seeded using short pulses emitted by a passively mode-locked semiconductor laser. Average output powers of 50 mW have been obtained at a center wavelength of 1080 nm for a drive current of 290 mA. Pulse compression yields durations as short as 520 fs and peak powers as high as 40 W. Perspectives for combining the semiconductor master oscillator power amplifier with Yb fiber amplifiers in a hybrid configuration are also briefly discussed.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; integrated optics; optical pulse compression; optical waveguides; semiconductor optical amplifiers; InGaAs-GaAs; Yb fiber amplifiers; current 290 mA; flared waveguide; long-wavelength InGaAs-GaAs flared amplifier; pulse compression; semiconductor optical amplifier; ultrashort pulse amplification; wavelength 1080 nm; High power amplifiers; Laser mode locking; Optical amplifiers; Optical fiber amplifiers; Optical pulses; Optical waveguides; Pulse amplifiers; Semiconductor lasers; Semiconductor optical amplifiers; Semiconductor waveguides; Optical pulse amplifiers; semiconductor lasers; semiconductor optical amplifiers (SOAs);
Journal_Title :
Lightwave Technology, Journal of
DOI :
10.1109/JLT.2007.909356
