Title :
Q-band (26¿40 GHz) GaAs FET single-stage amplifier
Author :
Oxley, C.H. ; Peake, A.H. ; Bennett, R.H.
Author_Institution :
Plessey Research (Caswell) Ltd, Allen Clark Research Centre, Towcester, UK
Abstract :
The high-frequency S-parameters of a 0.3 ¿m-gate-length GaAs FET have been measured and compared with the device equivalent circuit model. From the data a Q-band single-stage low noise (3.1 dB) amplifier was designed.
Keywords :
III-V semiconductors; field effect transistor circuits; gallium arsenide; microwave amplifiers; solid-state microwave circuits; 26 to 40 GHz; GaAs FET single-stage amplifier; Q-band amplifier; equivalent circuit model; high-frequency S-parameters;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19820179
