Title :
Low-threshold current CW operation of multiple infil buried heterostructure 1.3 ¿m GaInAsP lasers
Author :
Plastow, R. ; Harding, M. ; Griffith, Isaac ; Carter, A.C. ; Goodfellow, R.C.
Author_Institution :
Plessey Research (Caswell) Limited, Allen Clark Research Centre, Towcester, UK
Abstract :
1.3 ¿m buried-heterostructure lasers with CW threshold currents as low as 19 mA have been fabricated using a multilayer infil structure. This technique significantly reduces the alignment tolerances necessary for low-threshold BH laser fabrication. Single transverse and longitudinal mode operation is observed for active layer widths below 3.5 ¿m.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; laser modes; semiconductor junction lasers; 1.3 microns wavelength; CW threshold currents; GaInAsP lasers; buried-heterostructure lasers; longitudinal mode operation; multilayer infill structure; semiconductor laser; transverse mode operation;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19820180
