High reliability of AlGaInP LED´s with efficient transparent contacts for spatially uniform light emission

Author

Wu, Meng-Chyi ; Lin, Jyh-Feng ; Jou, Ming-Jiuun ; Chang, Chuan-Ming ; Lee, Biing-Jye

Author_Institution

Res. Inst. of Electr. Eng., Nat. Tsing Hua Univ., Hsinchu, Taiwan

Volume

16

Issue

11

fYear

1995

Firstpage

482

Lastpage

484

Abstract

The indium-tin oxide (ITO) films with low sheet resistance and conducting transparency have been used on the AlGaInP double-heterostructure orange light-emitting diodes (LED´s) to improve the light extraction from the LED surface and device reliability. The orange LED´s with ITO films exhibit a light output power of 1 mW at 50 mA, which corresponds to an external quantum efficiency of 1.1%. They can operate stably for more than 3000 h at 20 mA and 25/spl deg/C without any degradation.<>

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; light emitting diodes; semiconductor device reliability; semiconductor heterojunctions; 1 mW; 1.1 percent; 20 to 50 mA; 25 C; 3000 hour; 620 nm; ITO films; ITO-GaAs-AlGaInP; InSnO-GaAs-AlGaInP; conducting transparency; double-heterostructure LED; high reliability; low sheet resistance; orange LED; spatially uniform light emission; stable operation; transparent contacts; Conductive films; Contact resistance; DH-HEMTs; Epitaxial growth; Forward contracts; Indium tin oxide; Light emitting diodes; Optical films; Substrates; Surface resistance;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.468274

Filename

468274