On the transient operation of partially depleted SOI NMOSFET´s

Author

Gautier, J. ; Sun, J.Y.-C.

Volume

16

Issue

11

fYear

1995

Firstpage

497

Lastpage

499

Abstract

The transient operation of partially depleted (PD) Silicon-On-Insulator (SOI) NMOSFET´s is investigated, based on two-dimensional numerical simulations. The studied devices have a gate length of 0.2 μm and a floating body. They are designed for a supply voltage of 2 V. In the case of gate transient, we show that the body voltage is more influenced by the capacitive coupling with the gate electrode than the impact ionization current. Further, we demonstrate, for the first time, that the anomalous subthreshold slope, that exists in a DC static transfer I-V curve, does not exist in fast transient mode because the minimum time constant for body charging by impact ionization current is on the order of 3 ns in such devices.

Keywords

MOSFET; impact ionisation; semiconductor device models; silicon-on-insulator; transient analysis; 0.2 micron; 2 V; DC static transfer I-V curve; Si; anomalous subthreshold slope; body charging; capacitive coupling; fast transient mode; floating body; gate transient; impact ionization current; minimum time constant; n-channel MOSFET; partially depleted SOI NMOSFET; transient operation; two-dimensional numerical simulation; Electrons; Impact ionization; MOSFET circuits; Numerical simulation; Poisson equations; Silicon on insulator technology; Spontaneous emission; Sun; Temperature; Threshold voltage;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.468279

Filename

468279