Analysis of the cryogenic continuous film memory

It is shown that the experimental switching behavior of CFM cells with orthogonal drive lines can be quantitatively explained by a three-parameter persistatron-type model. This model is used to calculate the various cell operating limits and to prove that cell drive current operating range can never exceed of the optimum value. Maximizing this range is found to require operation in a mode in which some degree of information degradation by disturb currents occurs. The CFM cell disturb characteristics are shown to favor word-organized over bit-organized operation.