Gate-voltage dependence of source and drain series resistances and effective gate length in GaAs MESFETs

Author

Byun, Young H. ; Shur, Michael S. ; Peczalski, Andrzej ; Schuermeyer, Fritz L.

Author_Institution

Dept. of Electr. Eng., Minnesota Univ., Minneapolis, MN, USA

Volume

35

Issue

8

fYear

1988

fDate

8/1/1988 12:00:00 AM

Firstpage

1241

Lastpage

1246

Abstract

Experimental data and calculated results are presented to show that the source and drain series resistances in GaAs MESFETs are gate-voltage dependent. This dependence is caused by the gate-voltage modulation of the ungated portions of the channel. A simple analytical model is proposed that accounts for this dependence by introducing an effective gate-voltage-dependent gate length. For nominal 1-μm gate devices the effective gate length is 0.2-0.3 μm longer than the metallurgical gate length

Keywords

III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; semiconductor device models; 1 micron; GaAs; MESFETs; analytical model; calculated results; drain series resistances; effective gate length; gate voltage dependence; gate-voltage modulation; gate-voltage-dependent gate length; metallurgical gate length; micron gate lengths; models; semiconductors; source series resistance; Analytical models; Electrical resistance measurement; Energy consumption; Gallium arsenide; MESFETs; Microelectronics; Noise figure; Shape; Transconductance; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.2543

Filename

2543