Title :
Time-dependent interface trap effects in MOS devices
Author :
Boesch, H. Edwin, Jr.
Author_Institution :
Harry Diamond Labs., Adelphi, MD, USA
fDate :
12/1/1988 12:00:00 AM
Abstract :
A fast charge-pumping technique was used to measure the radiation-induced buildup of interface traps in MOS structures after exposure to short-pulse irradiation. A strong dependence of the time scale of the late-time buildup (t >10 ms) on the oxide electric field at very early times (10 μs to 0.5 ms) is explained in terms of a positive-ion-drift model. The early-time buildup (t<10 ms) component is examined in detail, and evidence is presented that the early buildup is controlled by transport of holes to the SiO2/Si interface
Keywords :
electron beam effects; insulated gate field effect transistors; interface electron states; metal-insulator-semiconductor devices; semiconductor device testing; MOS devices; MOSFET; SiO2-Si interface; early-time buildup; electron irradiation; fast charge-pumping technique; hole transport; interface traps; late-time buildup; oxide electric field; positive-ion-drift model; radiation-induced buildup; short-pulse irradiation; Charge pumps; Current measurement; Hydrogen; Laboratories; MOS devices; Milling machines; Powders; Predictive models; Process control; Temperature;
Journal_Title :
Nuclear Science, IEEE Transactions on
