Title :
High-performance low-base-collector capacitance AlGaAs/GaAs heterojunction bipolar transistors fabricated by deep ion implantation
Author :
Ho, M.C. ; Johnson, R.A. ; Ho, W.J. ; Chang, M.F. ; Asbeck, P.M.
Author_Institution :
Texas Instrum. Inc., Dallas, TX, USA
Abstract :
Low-base-collector capacitance (C/sub bc/) AlGaAs/GaAs HBTs with f/sub MAX/>200 GHz and f/sub T/=52 GHz have been fabricated. With co-implants of high energy, high dose He/sup +/ and H/sup +/ ions through the external base layer, part of the heavily doped n/sup +/ sub-collector was compensated leading to a decrease in the extrinsic portion of C/sub bc/. The implants caused only a slight increase of base resistance. Using this approach in combination with a standard low dose, shallow collector compensating implant, C/sub bc/ of double implanted HBT´s can be reduced by more than 35%.<>
Keywords :
III-V semiconductors; aluminium compounds; capacitance; gallium arsenide; heterojunction bipolar transistors; ion implantation; millimetre wave bipolar transistors; 200 GHz; 52 GHz; AlGaAs-GaAs; HBT fabrication; co-implants; deep ion implantation; heavily doped n/sup +/ sub-collector; heterojunction bipolar transistors; high energy H/sup +/ ions; high energy He/sup +/ ions; low-base-collector capacitance; shallow collector compensating implant; Annealing; Capacitance; Contact resistance; Doping; Electrical resistance measurement; Equivalent circuits; Gallium arsenide; Heterojunction bipolar transistors; Implants; Ion implantation;
Journal_Title :
Electron Device Letters, IEEE
