DocumentCode :
1000588
Title :
Megahertz linewidth from a 1.5 ¿m semiconductor laser with HeNe laser injection
Author :
Wyatt, R. ; Smith, D.W. ; Cameron, K.H.
Author_Institution :
British Telecom Research Laboratories, Ipswich, UK
Volume :
18
Issue :
7
fYear :
1982
Firstpage :
292
Lastpage :
293
Abstract :
The linewidth of a 1.5 ¿m semiconductor laser has been reduced from > 1 GHz to < 1.5 MHz by injection locking the laser to the low-power narrow-linewidth output from an HeNe laser operating at 1.523 ¿m. A collimated-beam power of 750 ¿W was obtained in the injection-locked semiconductor laser mode.
Keywords :
gas lasers; semiconductor junction lasers; spectral line breadth; 1.5 microns wavelength; HeNe laser injection; MHz linewidth; collimated-beam power; injection locking; semiconductor laser;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19820199
Filename :
4249657
Link To Document :
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