Title :
High-linearity high-current-drivability Ga/sub 0.51/In/sub 0.49/P/GaAs MISFET using Ga/sub 0.51/In/sub 0.49/P airbridge gate structure grown by GSMBE
Author :
Lin, Y.S. ; Lu, S.S. ; Sun, T.P.
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
Abstract :
A novel structure Ga/sub 0.51/In/sub 0.49/P/GaAs MISFET with an undoped Ga/sub 0.51/In/sub 0.49/P layer serving as the airbridge between active region and gate pad was first designed and fabricated. Wide and flat characteristics of g/sub m/ and fmax versus drain current or gate voltage were achieved. The device also showed a very high maximum current density (610 mA/mm) and a very high gate-to-drain breakdown voltage (25 V). Parasitic capacitances and leakage currents were minimized by the airbridge gate structure and thus high fT of 22 GHz and high fmax of 40 GHz for 1 μm gate length devices were attained. To our knowledge, both were the best reported values for 1 μm gate GaAs channel FET´s.
Keywords :
III-V semiconductors; MISFET; capacitance; current density; electric breakdown; etching; gallium arsenide; gallium compounds; indium compounds; leakage currents; microwave field effect transistors; microwave power transistors; molecular beam epitaxial growth; power field effect transistors; 1 micron; 22 GHz; 25 V; 40 GHz; GSMBE; Ga/sub 0.51/In/sub 0.49/P-GaAs; MISFET; airbridge gate structure; gate-to-drain breakdown voltage; high-current-drivability; maximum current density; microwave power application; undoped Ga/sub 0.51/In/sub 0.49/P layer; Bridge circuits; Current density; Gallium arsenide; Leakage current; MESFETs; MISFETs; Parasitic capacitance; Sun; Voltage; Wet etching;
Journal_Title :
Electron Device Letters, IEEE
