Title :
A Conductivity Modulated Polysilicon Thin-Film Transistor
Author :
Kumar, Anish K P ; Sin, Johnny K O ; Wong, Man ; Poon, Vincent M C
Author_Institution :
Dept. of Electr. & Electron. Eng., Hong Kong Univ. of Sci. & Technol., Clear Water Bay, Hong Kong
Abstract :
This paper reports a novel high voltage Conductivity Modulated Thin-Film Transistor (CMTFT) fabricated using polycrystalline silicon. The transistor uses the idea of conductivity modulation in the offset region to obtain a significant reduction in on-state resistance. Experimental on-state and off-state current-voltage characteristics of the CMTFT have been compared with those of the conventional offset drain device. Results show that the CMTFT has six times to more than three orders of magnitude higher on-state current handling capability for operating at drain voltages ranging from 15 V to 5 V while still maintaining low leakage current and providing even faster switching speed. The CMTFT devices can be fabricated using a low temperature process (620/spl deg/C) which is highly desirable for large area electronic applications.<>
Keywords :
silicon; thin film transistors; 5 to 15 V; 620 C; Conductivity Modulated Polysilicon Thin-Film Transistor; Si; high voltage CMTFT; large area electronic applications; leakage current; low temperature fabrication; off-state current-voltage characteristics; offset drain device; on-state resistance; polycrystalline silicon; switching speed; Charge carrier processes; Circuits; Conductivity; Electron traps; Implants; Leakage current; Silicon compounds; Temperature; Thin film transistors; Threshold voltage;
Journal_Title :
Electron Device Letters, IEEE
