The application of deep level transient spectroscopy to the measurement of radiation-induced interface state spectra

Author

Barnes, C. ; Zietlow, T. ; Nakamura, K.

Author_Institution

Aerosp. Corp., Los Angeles, CA, USA

Volume

35

Issue

6

fYear

1988

fDate

12/1/1988 12:00:00 AM

Firstpage

1197

Lastpage

1202

Abstract

The technique of constant capacitance, deep level transient spectroscopy (CC-DLTS) was used to measure the energy distribution of the Co-60-induced interface-state concentration, D, in MOS capacitors fabricated on both p- and n-type Si. In the Sandia baseline and Mod B test chips examined, D depends on the bias during irradiation and the postirradiation anneal. Annealing at 80°C causes the growth of deep states centered near 0.4 eV below the conduction band in n-type samples. For p-type Si, the postanneal spectrum is dominated by shallow interface states

Keywords

annealing; deep level transient spectroscopy; gamma-ray effects; interface electron states; metal-insulator-semiconductor structures; MOS capacitors; Sandia baseline; Si; Si-SiO₂; bias dependence; constant capacitance DLTS; deep level transient spectroscopy; deep states; energy distribution; gamma irradiation; interface-state concentration; postirradiation anneal; radiation-induced interface state spectra; shallow interface states; Annealing; Capacitance measurement; Energy measurement; Interface states; MOS capacitors; P-n junctions; Semiconductor device measurement; Spectroscopy; Temperature; Testing;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.25439

Filename

25439