Rapid thermal chemical vapor deposited oxides on N-type 6H-silicon carbide

Author

Sridevan, S. ; Misra, V. ; McLarty, P.K. ; Baliga, B.J. ; Wortman, J.J.

Author_Institution

Dept. of Electr. & Comput. Eng., North Carolina State Univ., Raleigh, NC, USA

Volume

16

Issue

11

fYear

1995

Firstpage

524

Lastpage

526

Abstract

The electrical characteristics of oxides deposited on nitrogen doped N-type 6H-silicon carbide using rapid thermal chemical vapor deposition are reported. The gases used in the deposition process were silane (diluted with argon), and nitrous oxide. The oxide was found to have an interface state density of 7/spl times/10/sup 11/ cm/sup -2/eV/sup -1/ and a low effective charge density of 1.1/spl times/10/sup 11/ cm/sup -2/. The deposited oxide is compared with oxide grown thermally on N-type 6H-silicon carbide by wet oxidation. The quality of the deposited oxide is found to be comparable to the quality of the thermal oxide. An excellent low thermal budget process to obtain good oxides on N-type 6H-silicon carbide has thus been demonstrated for the first time.<>

Keywords

CVD coatings; oxidation; rapid thermal processing; semiconductor materials; semiconductor technology; silicon compounds; SiC:N; effective charge density; electrical characteristics; interface state density; nitrogen doped N-type 6H-silicon carbide; nitrous oxide; oxides; rapid thermal chemical vapor deposition; silane; thermal budget; Argon; Capacitance-voltage characteristics; Chemical vapor deposition; Gases; Hafnium; Lamps; Nitrogen; Oxidation; Silicon carbide; Temperature;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.468288

Filename

468288