Continuous sheet sensing for random access memories

Magnetic and superconductive random access memories contain arrays of flux storage elements or sites, each of which is intersected by two selection lines used to switch flux, and one sense line used to detect flux changes. The need to have three lines intersect at many storage locations produces severe alignment problems in the fabrication of high-density deposited film memories. This paper explains and analyzes a recently announced sensing technique that operates by detecting the voltage drop caused by eddy currents induced in a normal continuous metal sheet whenever the flux linking it changes. The method is found to operate at room and cryogenic temperatures, and overcomes the alignment difficulties of the sense line technique.