Title :
GaAs 256-bit static RAM
Author :
Ohwada, Kazunari ; Ino, M. ; Mizutani, Tomoko ; Asai, Kikuo
Author_Institution :
NTT, Musashino Electrical Communication Laboratory, Musashino, Japan
Abstract :
A GaAs 256×1-bit static RAM with 2000 FETs organised in E/D-type DCFL circuits was successfully fabricated. A planar device structure was realised by using selective ion implantation and dielectric intermediate lift-off technology. The access time and the power dissipation were 50 ns and 9.4 mW, respectively.
Keywords :
III-V semiconductors; field effect integrated circuits; gallium arsenide; integrated memory circuits; ion implantation; random-access storage; E/D-type DCFL circuits; FETs; GaAs 256-bit static RAM; MESFET; access time; dielectric intermediate lift-off technology; planar device structure; power dissipation; selective ion implantation;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19820204
