Title :
The development of non-uniform deposition of holes in gate oxides
Author :
Freitag, R.K. ; Burke, E.A. ; Dozier, C.M. ; Brown, D.B.
Author_Institution :
US Naval Res. Lab., Washington, DC, USA
fDate :
12/1/1988 12:00:00 AM
Abstract :
The subthreshold technique was used to study irradiated MOS transistors at 80 K. Stretchout of the subthreshold curve demonstrated production of lateral nonuniformities (LNUs) in the hole distribution. The LNUs were analyzed in terms of a parallel transistor model and the statistics of the nonuniform distribution of dose deposition in the SiO 2. The results confirm the hypothesis that at 80 K the principal source of LNUs is the granularity in dose deposition. The relative standard deviation for the deposited dose is large for thin oxides, for 10 keV X-rays (as opposed to Co-60), and at low doses. These physical phenomena are predicted to have a significant effect at room temperature
Keywords :
X-ray effects; insulated gate field effect transistors; semiconductor device models; semiconductor device testing; 104 to 3.2×105 rad; 80 K; MOS transistors; Si-SiO2; X-ray irradiation; dose distribution granularity; gate oxides; lateral nonuniformities; nonuniform hole deposition; parallel transistor model; standard deviation; subthreshold curve; subthreshold technique; Annealing; Interface states; Laboratories; MOSFETs; Physics; Pollution measurement; Production; Statistical analysis; Statistical distributions; X-rays;
Journal_Title :
Nuclear Science, IEEE Transactions on
