Title :
Oxidation of (n)-InP by nitric acid
Author :
Michel, Cotsaftis ; Ehrhardt, J.J.
Author_Institution :
Institut des Sciences de I´Ingénieur, Laboratoire d´Ã\x89lectronique et de Physique des Interfaces, Villers-Nancy, France
Abstract :
Au-oxide-semiconductor barriers have been studied in n-type InP. A comparison was made, using the ESCA technique and current/voltage characteristics, between different natural oxides obtained with nitric acid as reagent. With regard to the ideality factor, barrier height and oxide resistivity, the best oxide is obtained with acid in a gaseous phase, and the XPS spectra give an interpretation of the oxide composition.
Keywords :
III-V semiconductors; indium compounds; metal-insulator-semiconductor structures; oxidation; Au-oxide-semiconductor barriers; ESCA technique; XPS spectra; barrier height; current/voltage characteristics; ideality factor; n-InP; nitric acid; oxidation; oxide resistivity;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19820208
