• DocumentCode
    1000669
  • Title

    Oxidation of (n)-InP by nitric acid

  • Author

    Michel, Cotsaftis ; Ehrhardt, J.J.

  • Author_Institution
    Institut des Sciences de I´Ingénieur, Laboratoire d´Ã\x89lectronique et de Physique des Interfaces, Villers-Nancy, France
  • Volume
    18
  • Issue
    7
  • fYear
    1982
  • Firstpage
    305
  • Lastpage
    307
  • Abstract
    Au-oxide-semiconductor barriers have been studied in n-type InP. A comparison was made, using the ESCA technique and current/voltage characteristics, between different natural oxides obtained with nitric acid as reagent. With regard to the ideality factor, barrier height and oxide resistivity, the best oxide is obtained with acid in a gaseous phase, and the XPS spectra give an interpretation of the oxide composition.
  • Keywords
    III-V semiconductors; indium compounds; metal-insulator-semiconductor structures; oxidation; Au-oxide-semiconductor barriers; ESCA technique; XPS spectra; barrier height; current/voltage characteristics; ideality factor; n-InP; nitric acid; oxidation; oxide resistivity;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19820208
  • Filename
    4249666
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1000669