Phenomenological model for the BIAX

This paper describes a model developed for the operation of the BIAX as applicable to an NDRO memory system. The role of a field transverse to the storage direction during writing is described. Factors contributing to the output and to the back voltage are pointed out to explain the ratio observed between these two. These individual contributions arise from rotation of the magnetization vector and changes in the dispersion angle during interrogation. A mechanical analogy is presented for the asymmetry of the NDRO observed under high-speed operation.