Title :
High-quantum-efficiency low-threshold microcleaved AlxGa1¿xAs lasers
Author :
Levine, B.F. ; van der Ziel, J.P. ; Logan, R.A. ; Bethea, C.G.
Author_Institution :
Bell Laboratories, Murray Hill, USA
Abstract :
Buried-heterostructure lasers with microcleaved mirrors have been fabricated with lengths varying from 40 to 100 ¿m. These lasers have thresholds as low as 7 mA and differential quantum efficiencies as high as 60%. They also show essentially single-longitudinal-mode operation for currents 25% above threshold.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; laser modes; semiconductor junction lasers; AlxGa1-xAs lasers; buried heterostructure laser; differential quantum efficiencies; microcleaved mirrors; semiconductor laser; single-longitudinal-mode operation; thresholds;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19820469
