• DocumentCode
    1000748
  • Title

    High-quantum-efficiency low-threshold microcleaved AlxGa1¿xAs lasers

  • Author

    Levine, B.F. ; van der Ziel, J.P. ; Logan, R.A. ; Bethea, C.G.

  • Author_Institution
    Bell Laboratories, Murray Hill, USA
  • Volume
    18
  • Issue
    16
  • fYear
    1982
  • Firstpage
    690
  • Lastpage
    691
  • Abstract
    Buried-heterostructure lasers with microcleaved mirrors have been fabricated with lengths varying from 40 to 100 ¿m. These lasers have thresholds as low as 7 mA and differential quantum efficiencies as high as 60%. They also show essentially single-longitudinal-mode operation for currents 25% above threshold.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; laser modes; semiconductor junction lasers; AlxGa1-xAs lasers; buried heterostructure laser; differential quantum efficiencies; microcleaved mirrors; semiconductor laser; single-longitudinal-mode operation; thresholds;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19820469
  • Filename
    4249673
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1000748