Title :
Fast annealing of 4 in. arsenic-implanted silicon wafers using an imaging furnace
Author :
Haond, M. ; Vu, D.-P. ; Ad¿¿s, C.
Author_Institution :
CNET, Centre Norbert Segard, Meylan, France
Abstract :
An imaging furnace equipped with a 6.5 kW Xe arc lamp has been used to anneal 4 in. arsenic-implanted silicon wafers in a single exposure. Electrical and structural investigations have shown complete activation without appreciable diffusion of the impurities, and the regrown layers are defect free for low implant dose (5×1014/cm2, 100 keV); for high implant dose (1015/cm2, 200 keV), however, dislocation loops are observed.
Keywords :
annealing; arsenic; elemental semiconductors; ion implantation; semiconductor doping; silicon; 4 in Si wafer; 6.5 kW Xe arc lamp; As implanted Si wafer; Si:As; dislocation loops; dopant activation; fast annealing; imaging furnace; ion implantation; regrown layers; semiconductor; structural investigations;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19820472
