• DocumentCode
    1000775
  • Title

    Fast annealing of 4 in. arsenic-implanted silicon wafers using an imaging furnace

  • Author

    Haond, M. ; Vu, D.-P. ; Ad¿¿s, C.

  • Author_Institution
    CNET, Centre Norbert Segard, Meylan, France
  • Volume
    18
  • Issue
    16
  • fYear
    1982
  • Firstpage
    694
  • Lastpage
    695
  • Abstract
    An imaging furnace equipped with a 6.5 kW Xe arc lamp has been used to anneal 4 in. arsenic-implanted silicon wafers in a single exposure. Electrical and structural investigations have shown complete activation without appreciable diffusion of the impurities, and the regrown layers are defect free for low implant dose (5×1014/cm2, 100 keV); for high implant dose (1015/cm2, 200 keV), however, dislocation loops are observed.
  • Keywords
    annealing; arsenic; elemental semiconductors; ion implantation; semiconductor doping; silicon; 4 in Si wafer; 6.5 kW Xe arc lamp; As implanted Si wafer; Si:As; dislocation loops; dopant activation; fast annealing; imaging furnace; ion implantation; regrown layers; semiconductor; structural investigations;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19820472
  • Filename
    4249676
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1000775