Gamma induced dose fluctuations in a charge injection device

Author

Burke, E.A. ; Bender, G.E. ; Pimbley, J.K. ; Summers, G.P. ; Dale, C.J. ; Xapsos, M.A. ; Marshall, P.W.

Author_Institution

Mission Res. Corp., San Diego, CA, USA

Volume

35

Issue

6

fYear

1988

fDate

12/1/1988 12:00:00 AM

Firstpage

1302

Lastpage

1306

Abstract

Spatial fluctuations in absorbed dose became important as device dimensions are scaled downward and the number of elements on a single chip increased. Furthermore, the extreme events in the distribution could determine the satisfactory operation of the array. The large sample size available in a charge injection device (CID) has made it possible, for the first time, to compare experimental results for gamma-induced dose fluctuations with theoretical calculations of extreme value distributions. The agreement between theory and experiment is excellent. In order to predict correctly the variance in the dose distribution from the basic model for solid-state imagers, it is found to be necessary in the case of a CID to include a term for carrier diffusion

Keywords

CCD image sensors; dosimetry; gamma-ray effects; CID; absorbed dose; carrier diffusion; charge injection device; dose distribution; extreme value distributions; gamma-induced dose fluctuations; solid-state imagers; Charge coupled devices; Fluctuations; Predictive models; Radiation effects; Semiconductor device measurement; Sensor arrays; Solid modeling; Solid state circuits; Statistical analysis; Ultraviolet sources;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.25456

Filename

25456