A general approach to nonresonant solid-state magnetic, semiconductor, and dielectric devices

This paper presents a unified approach to a broad class of solid-state devices, encompassing conductive-type, magnetic, and dielectric devices. The main features of the class of devices under consideration are emphasized, and among them the irreversibility is distinguished as arising from both the character of physical processes involved and the mechanics of the operation. The generalized "dynamic charge" concept is introduced, and the charge control approach is developed. An illustrational analysis of representative types of devices has been carried out, including the majority-type insulated gate transistor, the single-core magnetic amplifier, and the ferroelectric amplifier-transpolarizer. Intrinsic parameters of the devices are derived, and the central role of the "charge transducing" function of the gate is emphasized. The most important concepts and parameters of the charge control approach are summarized and tabulated for all three types of devices considered.