A novel method of fabricating integrated FETs for MEMS applications

This paper demonstrates a simple technique for building n-channel MOSFETs and complex micromechanical systems simultaneously instead of serially, allowing a more straightforward integration of complete systems. The fabrication sequence uses few additional process steps and only one additional masking layer compared to a MEMS-only technology. The process flow forms the MOSFET gate electrode using the first level of mechanical polycrystalline silicon, while the MOSFET source and drain regions are formed by dopant diffusions into the substrate from subsequent levels of heavily doped poly that is used for mechanical elements. The process yields devices with good, repeatable electrical characteristics suitable for a wide range of digital and analog applications.