DocumentCode :
1000950
Title :
A radiation hard frequency reference IC
Author :
Redman-White, W. ; Dunn, T.R. ; Lucas, D.R. ; Smithers, P.A. ; Winchcombe, S.A.
Author_Institution :
Dept. of Electron. & Comput. Sci., Southampton Univ., UK
Volume :
35
Issue :
6
fYear :
1988
fDate :
12/1/1988 12:00:00 AM
Firstpage :
1368
Lastpage :
1371
Abstract :
A high-stability radiation-hard crystal oscillator/divider fabricated in silicon-on-sapphire technology is described. Many analog functions are implemented in the chip, and an AGC system is used to reduce the influence of transistor parameter variations. Methods for obtaining radiation hardness by circuit design are discussed, and the particular problems associated with realizing analog circuits in SOS are addressed
Keywords :
analogue circuits; automatic gain control; crystal resonators; digital integrated circuits; field effect integrated circuits; frequency stability; integrated circuit technology; oscillators; quartz; radiation hardening (electronics); reference circuits; semiconductor technology; semiconductor-insulator boundaries; AGC system; SOS; Si-Al2O3; SiO2 crystals; analog circuits; circuit design; high-stability; radiation hard frequency reference IC; radiation hardened electronics; radiation hardness; radiation-hard crystal oscillator/divider; silicon-on-sapphire technology; Capacitors; Circuit stability; Circuit synthesis; Degradation; Frequency conversion; Oscillators; Silicon; Space technology; Voltage; Winches;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/23.25466
Filename :
25466
Link To Document :
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