Leakage currents in SOI MOSFETs

Author

Annamalai, N.K. ; Biwer, M.C.

Author_Institution

Rome Air Dev. Center, Hanscom AFB, MA, USA

Volume

35

Issue

6

fYear

1988

fDate

12/1/1988 12:00:00 AM

Firstpage

1372

Lastpage

1378

Abstract

Total-dose response of both NMOS and PMOS FETs fabricated on SOI substrates was studied. Two types of back-channel leakage currents were identified. A back-channel leakage due to MOSFET action uses the substrate bias as the gate bias. The other component is due to soft reverse characteristics of the body-drain junction. The back-channel leakage due to MOSFET action varies with the substrate bias and varies with irradiation due to the threshold voltage shift. The soft reverse characteristics are a function of drain-body voltage and vary with substrate bias and irradiation. I-V characteristics and subthreshold currents of both front and back channels as a function of total dose were obtained

Keywords

field effect integrated circuits; insulated gate field effect transistors; integrated circuit technology; radiation hardening (electronics); semiconductor technology; semiconductor-insulator boundaries; I-V characteristics; MOSFET action; SIMOX; SOI MOSFETs; SOI substrates; Si-SiO₂; ZMR substrates; back-channel leakage currents; body-drain junction; drain-body voltage; gate bias; radiation hardened electronics; soft reverse characteristics; substrate bias; subthreshold currents; threshold voltage shift; total dose effects; FETs; Leakage current; MOS devices; MOSFETs; Radiation hardening; Silicon on insulator technology; Solid state circuits; Subthreshold current; Testing; Threshold voltage;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.25467

Filename

25467