Comparison of the degradation effects of heavy ion, electron, and cobalt-60 irradiation in an advanced bipolar process

Author

Zoutendyk, John A. ; Goben, Charles A. ; Berndt, Dale F.

Author_Institution

Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA

Volume

35

Issue

6

fYear

1988

fDate

12/1/1988 12:00:00 AM

Firstpage

1428

Lastpage

1431

Abstract

Experimental measurements are reported of the degradation effects of high-energy particles (heavy ion (Br) and electron) and Co-60 gamma-rays on the current gain of minimum-geometry bipolar transistors made from an advanced process. The data clearly illustrate the total-ionizing-dose/particle-fluence behavior of this bipolar transistor produced by an advanced process. In particular, bulk damage from Co-60 gamma rays in bipolar transistors (base transport factor degradation) and surface damage in bipolar transistors from ionizing radiation (emitter-efficiency degradation) have been observed. The true equivalence between various types of radiation for this process technology has been determined on the basis of damage from the log[K₁] intercepts

Keywords

bipolar transistors; bromine; electron beam effects; gamma-ray effects; ion beam effects; radiation hardening (electronics); semiconductor technology; ⁶⁰Co gamma rays; Br ions; Co-60 gamma-rays; advanced bipolar process; base transport factor degradation; bulk damage; current gain; degradation; emitter-efficiency degradation; equivalence between types of radiation; high-energy particles; ionizing radiation; minimum-geometry bipolar transistors; radiation hardened electronics; surface damage; total-ionizing-dose/particle-fluence behavior; Bipolar transistors; Current measurement; Degradation; Electrons; Gain measurement; Gamma ray effects; Laboratories; Neutrons; Particle measurements; Propulsion;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.25475

Filename

25475