Bias control of long term radiation-induced transients in GaAs MESFETs

Author

Casey, R.H. ; Herman, W.N. ; LaCombe, D.J. ; Ragonese, L.J. ; Immorlica, A. ; Anderson, W.T.

Author_Institution

GE Re-entry Syst. Dept., Philadelphia, PA, USA

Volume

35

Issue

6

fYear

1988

fDate

12/1/1988 12:00:00 AM

Firstpage

1444

Lastpage

1450

Abstract

The effect of guard-ring bias and self-bias on radiation-induced long-term transients in GaAs D-MESFETs was measured for dose rates up to 10¹² rads (GaAs)/s. Results are presented for both ohmic and Schottky guard rings, with the substrate-bottom grounded as well as separately biased. Significant reduction in recovery times and transient amplitudes suggests that these are viable radiation-hardening techniques, allowing less dependence on the the device fabrication process

Keywords

III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; radiation hardening (electronics); semiconductor device testing; semiconductor technology; D-MESFETs; GaAs; GaAs MESFETs; Schottky guard rings; bias controlled transients; dose rates; guard-ring bias; long term radiation-induced transients; ohmic guard-rings; radiation hardened electronics; radiation-hardening techniques; radiation-induced long-term transients; reduction in recovery times; self-bias; semiconductors; substrate-bottom grounded; transient amplitudes; Buffer layers; FETs; Fabrication; Gallium arsenide; Ionizing radiation; MESFETs; Radiation hardening; Space technology; Substrates; Testing;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.25478

Filename

25478