Amorphous silicon/silicon carbide superlattice avalanche photodiodes

Author

Wu, Ming-Tien ; Chen, J.-K. ; Hong, Jin-Woo ; Chang, Chih-Yung

Volume

35

Issue

8

fYear

1988

fDate

8/1/1988 12:00:00 AM

Firstpage

1279

Lastpage

1283

Abstract

An a-Si/SiC:H superlattice avalanche photodiode (SAPD) has been successfully fabricated on an ITO/glass substrate by plasma-enhanced chemical vapor deposition. The room-temperature electron and hole impact ionization rates, α and β, have been determined for the a-Si/SiC:H superlattice structure by photocurrent multiplication measurements. The ratio α/β is 6.5 at a maximum electric field of 2.08×10⁵ V/cm. Avalanche multiplications in the superlattice layer yields an optical gain of 184 at a reverse bias V_R=20 V and an incident light power P_in=5 μW. An LED-SAPD photocouple exhibited a switching time of 4.5 μs at a load resistance R-1.8 kΩ

Keywords

amorphous semiconductors; avalanche photodiodes; chemical vapour deposition; elemental semiconductors; indium compounds; semiconductor materials; semiconductor superlattices; semiconductor technology; silicon; silicon compounds; substrates; (SAPD); 1.8 kohm; 20 V; 4.5 mus; 5 muW; ITO glass substrate; InSnO; LED-SAPD photocouple; PECVD; Si-SiC:H; amorphous semiconductors; electric field; incident light power; load resistance; optical gain; photocurrent multiplication measurements; plasma-enhanced chemical vapor deposition; superlattice avalanche photodiodes; switching time; Amorphous silicon; Avalanche photodiodes; Charge carrier processes; Chemical vapor deposition; Glass; Indium tin oxide; Plasma chemistry; Plasma measurements; Silicon carbide; Superlattices;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.2548

Filename

2548