Title :
Photocurrent modeling of modern microcircuit pn junctions
Author :
Enlow, Edward W. ; Alexander, David R.
Author_Institution :
Mission Res. Corp., Albuquerque, NM, USA
fDate :
12/1/1988 12:00:00 AM
Abstract :
Enhanced photocurrent models are derived for time-dependent photocurrent prediction in modern microcircuit pn junctions. These models incorporate additional effects not in the Wirth-Rogers photocurrent model. The enhanced models include high injection effects on excess minority carrier lifetime, electric fields in the quasi-neutral regions, and proximity effects of contacts and high/low junctions. These effects are most pronounced in high-resistivity material. The enhanced photocurrent model was constructed for use in computer simulation codes and has been successfully implemented in SPICE 2G
Keywords :
integrated circuit technology; p-n homojunctions; photoconducting devices; radiation hardening (electronics); semiconductor device models; semiconductor technology; SPICE 2G; Si; Wirth-Rogers photocurrent model; computer simulation codes; electric fields; enhanced models; excess minority carrier lifetime; high injection effects; high-resistivity material; high/low junctions; modern microcircuit pn junctions; photocurrent models; proximity effects of contacts; quasi-neutral regions; radiation hardened electronics; time-dependent photocurrent prediction; Boundary conditions; Charge carrier lifetime; Conductivity; Diodes; Photoconductivity; Predictive models; Production; SPICE; Semiconductor process modeling; Steady-state;
Journal_Title :
Nuclear Science, IEEE Transactions on
