DocumentCode :
1001150
Title :
Thin-film piezoelectric-on-silicon resonators for high-frequency reference oscillator applications
Author :
Abdolvand, Reza ; Lavasani, Hossein M. ; Ho, Gavin K. ; Ayazi, Farrokh
Author_Institution :
Sch. of Electr. & Comput. Eng., Oklahoma State Univ., Stillwater, OK
Volume :
55
Issue :
12
fYear :
2008
fDate :
12/1/2008 12:00:00 AM
Firstpage :
2596
Lastpage :
2606
Abstract :
This paper studies the application of lateral bulk acoustic thin-film piezoelectric-on-substrate (TPoS) resonators in high-frequency reference oscillators. Low-motional impedance TPoS resonators are designed and fabricated in 2 classes--high-order and coupled-array. Devices of each class are used to assemble reference oscillators and the performance characteristics of the oscillators are measured and discussed. Since the motional impedance of these devices is small, the transimpedance amplifier (TIA) in the oscillator loop can be reduced to a single transistor and 3 resistors, a format that is very power-efficient. The lowest reported power consumption is ~350 muW for an oscillator operating at ~106 MHz. A passive temperature compensation method is also utilized bThis paper studies the application of lateral bulk acoustic thin-film piezoelectric-on-substrate (TPoS) resonators in high-frequency reference oscillators. Low-motionalimpedance TPoS resonators are designed and fabricated in 2 classes--high-order and coupled-array. Devices of each class are used to assemble reference oscillators and the performance characteristics of the oscillators are measured and discussed. Since the motional impedance of these devices is small, the transimpedance amplifier (TIA) in the oscillator loop can be reduced to a single transistor and 3 resistors, a format that is very power-efficient. The lowest reported power consumption is ~350 muW for an oscillator operating at ~106 MHz. A passive temperature compensation method is also utilized by including the buried oxide layer of the silicon-on-insulator (SOI) substrate in the structural resonant body of the device, and a very small (-2.4 ppm/degC) temperature coefficient of frequency is obtained for an 82-MHz oscillator.y including the buried oxide layer of the silicon-on-insulator (SOI) substrate in the structural resonant body of the device, and a very small (-2.4 ppm/degC) temperature coefficient of frequency is obtained for an 82-M- z oscillator.
Keywords :
acoustic impedance; acoustic resonators; crystal resonators; oscillators; piezoelectric thin films; bulk acoustic resonators; frequency 82 MHz; high-frequency reference oscillator; motional impedance; temperature compensation; thin film piezoelectric-on-silicon resonators; transimpedance amplifier; Acoustic applications; Acoustic devices; Acoustic measurements; Assembly; Impedance; Oscillators; Piezoelectric films; Power amplifiers; Resistors; Temperature; Acoustics; Algorithms; Electric Impedance; Electrochemistry; Electronics; Equipment Design; Mechanics; Microelectrodes; Micromanipulation; Nonlinear Dynamics; Oscillometry; Oxides; Silicon; Temperature; Transistors, Electronic;
fLanguage :
English
Journal_Title :
Ultrasonics, Ferroelectrics, and Frequency Control, IEEE Transactions on
Publisher :
ieee
ISSN :
0885-3010
Type :
jour
DOI :
10.1109/TUFFC.2008.976
Filename :
4683468
Link To Document :
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