Radiation-hard static induction transistor

Author

Hanes, M.E. ; Bartko, J. ; Hwang, J.-M. ; Rai-Choudhury, P. ; Leslie, S.G.

Author_Institution

Westinghouse Res. & Dev. Center, Pittsburgh, PA, USA

Volume

35

Issue

6

fYear

1988

fDate

12/1/1988 12:00:00 AM

Firstpage

1475

Lastpage

1479

Abstract

The design, fabrication, and characteristics of a 350-V, 100-A buried-gate static induction transistor (SIT) as a power switching device for applications in military and space environments because of its potential for radiation hardness, high-frequency operation, and the incorporation of on-chip smart power sensor and logic functions are described. The potential radiation hardness of this class of devices was evaluated by measurement of SIT characteristics after irradiation with 100-Mrad (2-MeV) electrons and up to 10¹⁶ fission neutrons/cm ². High-temperature operation and the possibility of radiation damage self-annealing are discussed

Keywords

electron beam effects; field effect transistors; neutron effects; radiation hardening (electronics); semiconductor technology; 100 A; 1E8 Rd; 2 MeV; 350 V; SIT; Si; buried-gate static induction transistor; characteristics; design; fabrication; high temperature operation; high-frequency operation; logic functions; military environments; on-chip smart power sensor; power switching device; radiation damage self-annealing; radiation hard SIT; radiation hardened electronics; radiation hardness; space environments; Circuits; Electrons; FETs; JFETs; Logic devices; Optical control; Optical receivers; Optical sensors; Power MOSFET; Thyristors;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.25483

Filename

25483