Total dose radiation hardness of MOS devices in hermetic ceramic packages

Author

Kohler, Ross A. ; Kushner, Richard A. ; Lee, Kuo Hua

Author_Institution

AT&T Bell Lab., Allentown, PA, USA

Volume

35

Issue

6

fYear

1988

fDate

12/1/1988 12:00:00 AM

Firstpage

1492

Lastpage

1496

Abstract

The total-dose radiation hardness of hardened MOS transistors is experimentally shown to be degraded by hydrogen gas commonly trapped in hermetic-ceramic-package cavities. This introduces another variable to be considered in the manufacture and hardness assurance of total-dose-hardened integrated circuits. The observation also extends the link between hydrogen and interface-state formation to the understanding of hydrogen´s role in ionizing radiation effects. It is concluded from experiments in which hydrogen is diffused into irradiated oxides after Co-60 exposure that the diffusing hydrogen interacts with independently created radiation damage to form interface states

Keywords

hydrogen; insulated gate field effect transistors; integrated circuit technology; packaging; radiation hardening (electronics); semiconductor technology; semiconductor-insulator boundaries; ⁶⁰Co radiation; Co-60 exposure; H₂ gas effects; Si-SiO₂; hardened MOS transistors; hardness assurance; hermetic ceramic packages; interface-state formation; ionizing radiation effects; irradiated oxides; radiation hardened electronics; total-dose radiation hardness; total-dose-hardened integrated circuits; CMOS technology; Ceramics; Hermetic seals; Hydrogen; Interface states; MOS devices; Packaging; Radiation effects; Radiation hardening; Testing;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.25486

Filename

25486