• DocumentCode
    1001190
  • Title

    InP/InGaAs buried-structure avalanche photodiodes

  • Author

    Yasuda, Kazuhiro ; Kishi, Y. ; Shirai, Tokimasa ; Mikawa, T. ; Yamazaki, Shumpei ; Kaneda, Tadahiro

  • Author_Institution
    Fujitsu Laboratories Ltd., Atsugi, Japan
  • Volume
    20
  • Issue
    4
  • fYear
    1984
  • Firstpage
    158
  • Lastpage
    159
  • Abstract
    Planar InP/InGaAs avalanche photodiodes with a new guardring structure have been designed and fabricated. The diodes had a buried n-InP layer and an n¿-InP multiplication region under p-n junctions. A successful guardring effect was obtained. The diode exhibited a uniform multiplication over the active region, a maximum multiplication factor of 30, low dark currents of around 20 nA at 90% of breakdown voltage and a flat frequency response up to 1 GHz. Multiplication noise was measured up to a multiplication factor of 17.
  • Keywords
    III-V semiconductors; avalanche photodiodes; gallium arsenide; indium compounds; III-V semiconductors; InP/InGaAs avalanche photodiodes; buried n-InP layer; dark currents; flat frequency response; guarding structure; maximum multiplication factor; n--InP multiplication region; uniform multiplication;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19840106
  • Filename
    4249718
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1001190