Using laboratory X-ray and cobalt-60 irradiations to predict CMOS device response in strategic and space environments

Author

Fleetwood, D.M. ; Winokur, P.S. ; Schwank, J.R.

Author_Institution

Sandia Nat. Lab., Alburquerque, NM, USA

Volume

35

Issue

6

fYear

1988

fDate

12/1/1988 12:00:00 AM

Firstpage

1497

Lastpage

1505

Abstract

The postirradiation response of CMOS transistors with 30-60-nm gate oxides is investigated as a function of radiation energy, total dose, dose rate, and annealing time. Measurements of threshold voltage, oxide-trapped charge, and interface traps are reported for times ranging from 10 ms to 4 months following LINAC, Co-60, Cs-137, and 10-keV X-ray irradiations. Exposure dose rates vary by 11 orders of magnitude: from 0.05 to 6×10⁹ rad(SiO₂)/s. To within the ±10% uncertainty in the overall dosimetry, no `true´ dose-rate effects on MOS device response are observed. Interface trap and oxide-trapped charge densities are linear with total dose. Preliminary recommendations are made for lot acceptance testing of hardened CMOS circuits and devices intended for use in space and strategic environments

Keywords

CMOS integrated circuits; X-ray effects; environmental testing; gamma-ray effects; inspection; integrated circuit technology; integrated circuit testing; quality control; radiation hardening (electronics); semiconductor technology; 10 keV; 10 ms to 122 days; 30 to 60 nm; ¹³⁷Cs irradiation; ⁶⁰Co irradiation; CMOS device response; CMOS transistors; LINAC radiation; QA; Si-SiO₂; X-ray irradiations; annealing time; dose rate; dose-rate effects; gamma-ray effects; gate oxides; hardened CMOS circuits; interface traps; lot acceptance testing; oxide-trapped charge; oxide-trapped charge densities; postirradiation response; radiation energy; radiation hardness assurance; space environments; strategic environments; threshold voltage; total dose; Annealing; Charge measurement; Circuit testing; Current measurement; Dosimetry; Laboratories; Linear particle accelerator; Threshold voltage; Uncertainty; Voltage measurement;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.25487

Filename

25487