Comparison of threshold transient upset levels induced by flash X-rays and pulsed lasers

Author

Raburn, W.D. ; Buchner, S.P. ; Kang, K. ; Singh, R. ; Sayers, S.

Author_Institution

Univ. of South Alabama, Mobile, AL, USA

Volume

35

Issue

6

fYear

1988

fDate

12/1/1988 12:00:00 AM

Firstpage

1512

Lastpage

1516

Abstract

The use of pulsed laser testing as a method of evaluating the transient-radiation upset thresholds of integrated circuits is discussed. By comparing upset levels using a pulsed laser with those obtained using a flash X-ray that has long been an accepted transient-radiation simulator, it is shown that the laser can be used as a reliable source for 100% screening and also as an efficient development tool. Differences in the responses of the two sources are pointed out, and it is shown that upset levels of CMOS SRAMs using the two sources are in good agreement when these factors are taken into account. Results for both wafer level and packaged parts testing are presented

Keywords

CMOS integrated circuits; X-ray effects; environmental testing; inspection; integrated circuit technology; integrated circuit testing; integrated memory circuits; laser beam applications; laser beam effects; production testing; radiation hardening (electronics); random-access storage; semiconductor technology; 100% screening; CMOS SRAMs; development tool; flash X-rays; integrated circuits; packaged parts testing; pulsed laser testing; pulsed lasers; radiation hardness testing; threshold transient upset levels; transient-radiation simulator; transient-radiation upset thresholds; wafer level testing; Circuit testing; Linear particle accelerator; Optical pulses; Packaging machines; Photoconductivity; Pulse circuits; Pulse measurements; Random access memory; Wafer scale integration; X-ray lasers;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.25489

Filename

25489