A monolithically integrated InGaAs/InP photoreceiver operating with a single 5-V power supply

Author

Matsuda, Kenichi ; Kubo, Minoru ; Ohnaka, Kiyoshi ; Shibata, Jun

Author_Institution

Matsushita Electr. Ind. Co. Ltd., Osaka, Japan

Volume

35

Issue

8

fYear

1988

fDate

8/1/1988 12:00:00 AM

Firstpage

1284

Lastpage

1288

Abstract

A monolithic photoreceiver consisting of an InGaAs p-i-n photodiode and a transimpedance preamplifier in which four junction field-effect transistors four level shift diodes, and a feedback resistor are integrated is described. This photoreceiver has been designed to operate with a single 5-V power supply for the purpose of simplifying the whole transmission system. Easily producible device structures were adopted to increase the yield of the photoreceivers. A circuit transimpedance of 965 Ω and a 3-dB frequency of 240 MHz have been obtained for 5-V operation. Transmission of a 400-Mb/s NRZ signal has been achieved

Keywords

III-V semiconductors; field effect integrated circuits; gallium arsenide; indium compounds; integrated circuit technology; integrated optoelectronics; optical communication equipment; 240 MHz; 400 Mbit/s; 5 V; 5-V operation; InGaAs p-i-n photodiode; InGaAs-InP; NRZ signal; OEIC; circuit transimpedance; feedback resistor; junction field-effect transistors; level shift diodes; monolithic photoreceiver; single 5-V power supply; transimpedance preamplifier; FETs; Feedback; Indium gallium arsenide; Indium phosphide; Integrated circuit yield; P-i-n diodes; PIN photodiodes; Power supplies; Preamplifiers; Resistors;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.2549

Filename

2549