Use of PuBe source to simulate neutron-induced single event upsets in static RAMs

Author

Normand, Eugene ; Wert, Jerry L. ; Doherty, W. Ross ; Oberg, Dennis L. ; Measel, Paul R. ; Criswell, Tommy L.

Author_Institution

Boeing Aerosp. Co., Seattle, WA, USA

Volume

35

Issue

6

fYear

1988

fDate

12/1/1988 12:00:00 AM

Firstpage

1523

Lastpage

1528

Abstract

Neutron-induced single-event upsets were measured in static memory devices using a 10-curie PuBe source. The PuBe source conservatively overestimates the spectrum of fast neutrons emitted by a radioisotope thermoelectric generator (RTG). For the 93L422, the neutron-induced upset rate compared favorably with calculated values derived using the burst-generation concept. By accounting for the production of the ionizing particles by the PuBe and RTG neutron spectra, convenient upper-bound single-event-upset rates for memory devices near an RTG can be derived

Keywords

beryllium compounds; environmental testing; inspection; integrated circuit technology; integrated circuit testing; integrated memory circuits; large scale integration; lead compounds; neutron effects; neutron sources; radiation hardening (electronics); radioactive sources; random-access storage; semiconductor technology; 10 curie; 93L422; PuBe source; RTG; RTG neutron spectra; SEU; SRAMs; burst-generation concept; memory devices; neutron sources; neutron-induced single event upsets; neutron-induced upset rate; radiation hardness testing; radioactive sources; radioisotope thermoelectric generator; static RAMs; static memory devices; upper-bound single-event-upset rates; Discrete event simulation; Ionization; Large scale integration; Microelectronics; Neutrons; Radioactive materials; Read-write memory; Single event transient; Single event upset; Thermoelectricity;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.25491

Filename

25491